1.0-V and 1.5-V operation of 4-GHz tuned amplifiers implemented in a 0.1-/spl mu/m CMOS technology on bulk and SOI substrates

4-GHz 1.5-V tuned amplifiers are implemented using a partially-scaled double-level-metal 0.1-/spl mu/m CMOS process on bulk and SOI substrates. The bulk and SOI amplifiers have forward transducer gains (S/sub 21/) of 14 and 11 dB at V/sub DD/=1.5 V. The bulk amplifier has F/sub min/'s of 3.6 and 4.5 dB at 3 and 4 GHz, respectively, with a power consumption of about 28 mW. When the supply voltage is reduced to 1.0 V, F/sub min/ is increased to 4.4 and 5.0 dB at 3.0 and 4.0 GHz, while the peak gain and power consumption are lowered to 9 dB and 12.7 mW, respectively, which are not significantly worse than those of 5.8-GHz silicon bipolar LNA's.