Si/sub 1-x-y/Ge/sub x/C/sub y/ alloys: an enabling technology for scaled high performance silicon-based heterojunction devices

Si/Si/sub 1-x/Ge/sub x/ heterostructures have traditionally faced both fundamental and practical limitations in their applications to advanced device technology. These hurdles have been most significantly been the well known critical thickness limitation for pseudomorphic growth and the less known sensitivity of devices to heterojunction process integration. In this paper, we review how Si/sub 1-x-y/Ge/sub x/C/sub y/ alloys grown by rapid thermal chemical vapor deposition (RTCVD) are an enabling technology to overcome both these fundamental and practical issues. Examples are shown for sub-100-nm MOS devices.