Deep submicron PHEMTs characterization with spectrally resolved carrier recombination imaging

A novel technique-spectrally resolved carrier recombination imaging-has been developed to characterize deep submicron PHEMTs. While a correlation between electroluminescence of 0.63 /spl mu/m and the gate current is observed in PHEMTs, that between electroluminescence of 1 /spl mu/m and the gate/drain current product is also verified. This distinct current dependence result is further supported by observing different polarization characteristics of 1 /spl mu/m and 0.63 /spl mu/m light emission, suggesting that they are generated from different layers inside the device. By using the established correlation function and post-processing the light emission image data, the distribution of electric field and current density along gate width is determined for the first time.