Physics-based RF noise modeling of submicron MOSFETs

The Impedance Field Method (IFM) for physics-based noise modeling of electron devices is applied, for the first time, to evaluate the RF noise performance of submicron MOSFETs. Starting with an accurate representation of the structure and doping of devices from a 0.25 /spl mu/m CMOS technology, we present the behavior of the drain and gate power and correlation noise spectra, as a function of frequency and gate length. The simulations are shown to be in agreement with measured noise parameters.