0.2-μm p/sup +/-n junction characteristics dependent on implantation and annealing processes

Junction depth, sheet resistance, dopant activation, and diode leakage current characteristics were measured to find out the optimal processing conditions for the formation of 0.2-μm p/sup +/-n junctions. Among the 2×10/sup 15/ cm/sup -2/ BF
₂
implanted crystalline, As or Ge preamorphized silicon, the crystalline and Ge preamorphized samples exhibit excellent characteristics. The thermal cycle of furnace anneal (FA) followed by rapid thermal anneal (RTA) shows better characteristics than furnace anneal, rapid thermal anneal, or rapid thermal anneal prior to furnace anneal.