A 300-V Ultra-Low-Specific On-Resistance High-Side p-LDMOS With Auto-Biased n-LDMOS for SPIC

In this paper, a high-side p-channel LDMOS (pLDMOS) with an auto-biased n-channel LDMOS (n-LDMOS) based on Triple-RESURF technology is proposed. The p-LDMOS utilizes both carriers to conduct the on-state current; therefore, the specific on-resistance (R
_on,sp
) can be much reduced because of much higher electron mobility. The simulation result shows that the proposed 300-V p-LDMOS obtains a R
_on,sp
of 16.97 mΩ/cm
²
, which is about 65% reduced compared with the Triple-RESURF silicon limit and is comparable to an optimized n-LDMOS (BV = 340 V, R
_on,sp
= 18 mΩ/cm
²
). In addition, due to larger current capability, the active area of the proposed p-LDMOS is only about one third of an optimized Triple-RESURF p-LDMOS. The turn-on (t
_r
) and turn-off time (t
_f
) are reduced by 51.2% and 40.0%, compared to the optimized Triple-RESURF p-LDMOS, respectively.