InAs FinFETs With $\textrm {H}_{\mathrm {fin}}=20$ nm Fabricated Using a Top–Down Etch Process

We report the first demonstration of InAs FinFETs with fin width
$\textrm {W}_{{\mathrm{fin}}}$
in the range 25–35 nm, formed by inductively coupled plasma etching. The channel comprises defect-free, lattice-matched InAs with fin height
$\textrm {H}_{{\mathrm{fin}}}=20$
nm controlled by the use of an etch stop layer incorporated into the device heterostructure. For a gate length
$\textrm {L}_{{{\textrm {g}}}}=1~\mu \text{m}$
, peak transconductance
$\textrm {g}_{{{\textrm {m},{\mathrm{ peak}}}}}=1430~\mu \text{S}/\mu \text{m}$
is measured at
$\textrm {V}_{{\textrm {d}}}=0.5$
V demonstrating that electron transport in InAs fins can match planar devices.