Uncooled operation of 1.3 /spl mu/m AlGaInAs/AlInAs/InP laser diodes grown by solid source molecular beam epitaxy

All solid source molecular beam epitaxy (SSMBE), where only solid group-V sources are used, eliminates fabrication problems. We present our results on the development of 1.3 /spl mu/m AlGaInAs-AlInAs-InP laser diodes, and show that high-performance laser diodes can be prepared from SSMBE grown material.