Determination of the small-signal parameters of an AlGaAs/GaAs MODFET

The small-signal equivalent-circuit parameters of an AlGaAs/GaAs MODFET are derived by a first-order perturbation around the two-region DC model of a FET. For the first time the contribution of the AlGaAs electrons is included by using an accurate charge-control model. The charge-control model uses mixed quantum mechanical and classical approach to determine the density of channel electrons and AlGaAs neutral donors as a function of rate voltage. The model predictions show good agreement with experimental results for both low and high drain bias voltages.<
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