CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With $I_{ON}=156~\mu \text{A}/\mu \text{m}$ at $V_{DD}= 0.5$ V and $I_{OFF}=100$ nA/ $\mu \text{m}$

We report CMOS-compatible n-channel InGaAson-insulator FinFETs obtained using a replacement metal gate fabrication flow. The fabricated devices feature 12-nm-thick SiN
_x
spacers, a scaled high-k/metal gate (capacitance equivalent thickness of ~1.5 nm), raised source and drain doped to ~6 × 10
¹⁹
/cm
³
, and fin width scaled down to 15 nm. Very good control of short-channel effects is demonstrated down to a gate length of 50 nm with a minimum subthreshold swing of 92 mV/decade at V
_DS
= 0.5 V and a drain-induced barrier lowering of 57 mV/V. An ON-state current (I
_ON
) of 156 μA/μm is also reported for a supply voltage of 0.5 V and a fixed OFF-state current of 100 nA/μm. This I
_ON
value is the highest reported to date for CMOS-compatible InGaAs devices integrated on Si.