Channel-length measurement technique based on a floating-gate device

By measuring the threshold voltage of the structure for several drawn channel lengths, Delta L is extracted. This technique is the translation of a capacitance measurement into a threshold measurement and as such is accurate and simple to perform. Since the technique does not involve a current flow through the transistor under test, it is especially advantageous for L/sub eff/ measurements on lightly-doped drain (LDD) and double-diffused drain (DDD) short-channel devices.<
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