Methods of nano-crystallization of thin silicon films

In the paper the authors are analyzing differences in the nature of crystallization between: the nano-crystallization during deposition in multilayer RF PECVD process, in which hydrogen concentration and other parameters were changing over time, and crystallization of the same samples during temperature annealing in the range 200-1000°C. Observed behavior differs from columnar crystallization of μc-Si:H films deposited in homogeneous process. The analysis is carried out with respect on application of the films to solar structures.