Molecular Beam Epitaxy of Cu2O Heterostructures for Photovoltaics

Cu
₂
O is a p-type semiconductor that has demonstrated attractive photovoltaic properties, but its efficiencies have been limited by surface instability and lack of high quality thin films. In this work, plasma-assisted molecular beam epitaxy is used to precisely control film orientation and interface chemistry of Cu
₂
O heterostructures. Thin films of Cu
₂
O are deposited by MBE onto thin films of Pt and Au sputtered on MgO single crystal substrates. This heterostructure configuration provides a path for an all-epitaxial thin film Cu
₂
O solar cell, which can serve as a top cell in a tandem structure with a crystalline Si bottom cell.