Novel buried-heterostructure strained-multiple-quantum-well lasers with oxidized insulating current-blocking layers

We have proposed and demonstrated novel planar-buried-heterostructure InGaAsP semiconductor MQW lasers that include oxidized AlAs current-blocking layers. These layers provide strong current confinement, thus enabling excellent lasing performance such as a threshold current of 6 mA, a slope efficiency of 0.51 W/A under CW condition and a maximum output power of up to 150 mW under pulsed condition, achieved at 25°C.