Computationally Efficient Simulation of High-Frequency Transients in Power Electronic Circuits

A computationally efficient simulation framework is set forth in which the semiconductor devices are represented by the physical phenomena relevant to the accurate prediction of high-frequency circuit-level transients and energy losses. Key elements of this framework include an encapsulated diode model and a method of coupling device models with those of external circuit elements given a user-specified SPICE-like netlist. The framework is applied to a single-phase full-bridge diode rectifier circuit with a discussion on time-step requirements and overall computational performance. Comparisons between simulated and measured waveforms are also provided revealing excellent agreement.