Experimental study of LCI lasers fabricated by single MOCVD overgrowth followed by selective dopant diffusion

We report the design, fabrication, and characterization of lateral current injection (LCI) GaInAsP SQW lasers made using a single etch-and-regrowth followed by selective dopant diffusion. Devices are characterized electrically and optically from 10 to 300 K. Using the recently developed theory of the LCI laser, the threshold current, spontaneous efficiency, and stimulated efficiency are related to physical mechanisms that underlie the operation of this promising family of devices. We explore the prospects for LCI lasers to enable monolithic photonic integrated circuits and functional optoelectronic devices.