Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges

We compare through numerical simulations a Si GBHT and a SiGe HBT: the f
_T
limit of GBHTs is predicted to be more than twice as high as for HBTs assuming a transparent graphene/Si interface; if a more realistic interface model extrapolated from existing experiments is used, the f
_T
limit drops by about two orders of magnitude.