Electrohydrodynamic Jet Printed Indium–Zinc–Oxide Thin-Film Transistors

Electrohydrodynamic (EHD) jet-printed indium-zinc-oxide thin-film transistors (TFTs) were prepared at various annealing temperatures. The EHD jet was achieved by optimizing the process parameters; such as the precursor viscosity, driving voltages, and substrate temperatures. The EHD jet-printed IZO films were characterized using a range of analytical methods. Metal oxide formation was confirmed by X-ray photoelectron spectroscopy. The EHD jet-printed IZO TFTs showed good electrical properties: a mobility of 4.8 cm
²
/V·s, a threshold voltage of 8.4 V, an on-to-off current ratio of 10
⁷
, and a subthreshold slope of 1.2 V/dec at 400 °C. The positive and negative bias stability were also analyzed.