Spin Hall Magnetoresistance in CoFe2O4/Pt Films

Pulse laser deposition and magnetron sputtering techniques have been employed to prepare MgO(001)//CoFe
₂
O
₄
/Pt samples. Cross section transmission electron microscope results prove that the CoFe
₂
O
₄
film epitaxially grew along (001) direction. X-ray magnetic circular dichroism results show that magnetic proximity effect in this sample is negligible. Magnetoresistance (MR) properties confirm that spin Hall MR (SMR) dominates in this system. Spin Hall effect-induced anomalous Hall voltage was also observed in this sample. These results not only demonstrate the universality of SMR effect but also demonstrate the utility in spintronics of CoFe
₂
O
₄
as a new type of magnetic insulator.