Multi-trench-based technique to improve amorphous SiGe thin-film solar cell performance

In order to improve the electrical performance of the conventional amorphous SiGe thin-film solar cells, a new multi-trench technique has been proposed. In this method, the multi-trench is created in the intrinsic SiGe layer and filled with p-type doped Si. The p-type trenches in the intrinsic SiGe layer improve the electrical performance of the proposed design. Electrical characteristics of the proposed structure are analyzed and optimized by 2-D numerical modeling and compared with conventional amorphous SiGe thin-film solar cell characteristics. The extracted results show that the multi-trench-based technique has excellent effect on the fill factor and efficiency of the device.