Investigation of performance limiting factors of sub-10nm III-V FinFETs

As scaling of transistor continues, there is strong impetus to replace Si with attractive alternate channel materials like InGaAs that would provide high on-current at low voltages. However, many key technology issues need to be addressed and in this paper, we present a rigorous investigation into the performance limiting factors of III-V FinFETs using a 3D Monte-Carlo simulation methodology.