A new method for fast short circuit protection of IGBTs

This paper presents a new, simple and low cost method for fast short circuit protection of IGBT modules. The principle of the method is to measure the voltage across the inductance between the power-emitter and the auxiliary-emitter. Moreover, by modulating the gate-signal, the new method reduces the gate emitter voltage V
ge
in order to limit the short circuit current and allows the semiconductor to be operated in the safe operation area. The new concept has been implemented in a gate unit, which is controlled by an FPGA. The performance of the gate unit has been verified in a buck converter with an IGBT module FF1400R12IP4 of 1400 A/1200 V.