Charge control modeling during transient behavior of PT-IGBT using PSpice macromodel

A new PSpice model of punch-through (PT) IGBTs is developed to account for the presence of the buffer layer and its influence on the dynamic behavior of the device. The recombination and redistribution of charge in the base region of IGBTs during a transient behavior are modeled and represented by equivalent electric circuits. In particular, the effect of the external voltage (clamping voltage) on the tail current decay is modeled. Besides, phenomena such as the "tail bump" and the variation of the slope in the initial part of the output voltage V/sub ce/ during a turn-off transient are modeled. The proposed model is validated by comparing several simulation runs to the experimental traces at different static and dynamic working conditions.