The influence of proton irradiation on the interface states in InP/InGaAs heterojunction structure

The effects of 3 MeV and 10 MeV proton irradiation on the performance of InP/InGaAs heterojunction structure are reported. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics before and after proton irradiation are compared. The interface states density is calculated on the basis of the frequency dependent capacitance-voltage (C-V) measurements. The results show that the interface states increase with the increase in fluence after 3 MeV proton irradiation. Also, more interface states are induced by the irradiation with lower energy proton.