Investigation of Multi- $V_{\mathrm {th}}$ Efficiency for Trigate GeOI p-MOSFETs Using Analytical Solution of 3-D Poisson’s Equation

This paper provides an analytical subthreshold model for trigate MOSFETs with thin buried oxide (BOX) for multithreshold (multi-V
_th
) applications. This model shows a fairly good scalability in substrate bias and BOX thickness, which is crucial to the prediction of multi-V
_th
modulation through BOX. In addition, we demonstrate the application of our model in multi-V
_th
device design for trigate GeOI p-MOSFETs with the body-effect coefficient (γ) over a wide range of design space efficiently examined. We have shown an enhanced multi-V
_th
modulation behavior in trigate GeOI p-MOSFETs. Our study indicates that, for a given subthreshold swing and γ, the GeOI trigate p-MOSFET can possess a higher fin aspect ratio than the SOI counterpart.