Low-Voltage High-Stability InZnO Thin-Film Transistor Using Ultra-Thin Solution-Processed ZrO$_{x}$ Dielectric

This paper deals with the evaluation of the performances of InZnO thin-film transistor (TFT) using as dielectric an ultra-thin solution-processed ZrO
_x
layer. The ZrO
_x
thin film was formed using ultraviolet (UV) photo-annealing method and shows a low leakage-current density of 4 nA/cm
²
at 3.8 MV/cm and a large areal-capacitance of 775 nF/cm
²
at 50 Hz. The InZnO TFT incorporating the UV-treated ZrO
_x
dielectric exhibits high stable and enhanced characteristics, an on/off current ratio of 10
⁷
, a field-effect mobility of 14.7 cm
²
/V·s, a subthreshold swing voltage of 100 mV/decade and a threshold voltage shift under bias stress, for 2 hours less than 0.1 V. All these performances are obtained at a low operation voltage of 2 V and make it suitable for use as a switching transistor in low-power electronics applications.