Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer

Low-frequency noise (LFN) of gate stacks with Tm
₂
O
₃
high-k dielectric and thulium silicate (TmSiO) interfacial layer (IL) is investigated. The measured 1/f noise is compared to SiO
_x
/HfO
₂
stacks with comparable IL thickness. Integration of a high-k thulium silicate IL provides a scaled EOT of 0.3nm with good mobility and interface quality, hence excellent LFN is obtained. The LFN noise for devices with TmSiO/Tm
₂
O
₃
gate dielectric is reduced for nMOSFETs and comparable for pMOSFETs compared to SiO
_x
/HfO
₂
devices.