Controllable Set Voltage in Bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation

In this letter, we investigated oxygen ion concentration gradient method, which can manipulate the set voltage of zinc oxide-doped silicon oxide resistance random access memory. To analyze this method, the ITO/ZnO:SiO
₂
/ZnO
_x
/TiN bilayer structure was proposed and discussed. On the basis of the oxygen ions migration effect, the set voltage of the oxide-based resistive memory can be altered after a bias stress at the TiN electrode. The physical mechanism of the special resistive switching characteristics were depicted by the interaction between [O
²⁻
] gradient driving force and electrical force.