Tunneling transport in insulators

A model for tunneling transport in insulators that includes the internal field in the tunneling effects is proposed. The model is verified by comparing the values of the estimated parameters in the low-field and high-field cases with experimental results. The relationship between the hopping conduction in terms of internal field and the usual approach of phonon-assisted tunneling is examined. It is noted that quite different situations, such as the Poole-Frenkel effect and tunneling phenomena, call for a unifying picture of all the bulk-limited electronic transport processes in insulators in terms of the internal electric field.<
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