Predictive Modeling of Channel Potential in 3-D NAND Flash Memory

For the first time, this brief analyzes the channel potential and capacitance in channel-stack type 3-D NAND flash memory structure. In addition, the effects of geometrical parameters on 3-D NAND flash design with gate-all-around and double-gate devices are studied. The model can be incorporated into a compact circuit model for 3-D NAND flash design optimization.