Sputtered Deposited Carbon–Indium–Zinc Oxide Channel Layers for Use in Thin-Film Transistors

We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al
₂
O
₃
substrates at room temperature. The deposited a-CIZO TFT postannealed at 250°C exhibited a saturation field effect mobility of 32.3 cm
²
/V · s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 × 10
⁷
. Moreover, the a-CIZO TFTs showed with a good bias stability.