Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors

High resolution Schottky barrier detectors for alpha particles were fabricated using 20 μm thick detector grade n-type 4H-SiC epitaxial layer. The Schottky barrier detectors were characterized through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Deep level transient spectroscopic (DLTS) measurements were carried out to identify and characterize the electrically active defect levels present in the epitaxial layers. The detection properties of the Schottky detectors were characterized in terms of alpha particle peak widths in pulse height spectra obtained using a standard alpha emitting radioisotope source. The differences in the performance of different detectors were correlated on the basis of the barrier properties and the deep level defect type, concentration, and capture cross-section. Varying degree of the presence of deep level defects was found to be the reason behind the leakage current variation and the difference in the ultimate detector performance observed among the detectors. From the DLTS data it was found that at least two defect centers located at E
_c
-0.6 eV (Z
_1/2
) and at E
_c
-1.6 eV (EH
_6/7
),both related to carbon vacancies, affected the detector performance the most.