Gunn Effect in n-InP MOSFET at positive gate bias and impact ionization conditions

In modern FET/HEMT structures the Gunn-effect is not usually considered as one of the mechanisms able to realize high-frequency (near terahertz (THz)) oscillations of the current. Physically, the effect is caused by the suppression effect of the remote Coulomb interaction which takes place in the gated region of the conducting channel. In the present work we propose a way to overcome this limitation by using the impact ionization effect. It is shown by Monte Carlo simulation that the impact ionization in MOSFET structures allows us to get near THz oscillations.