Investigation of implantation damage recovery using microwave system for defect-less p-n junction

Advanced junction technology aiming at defect-less p-n junctions has been studied for the integration of ultimately scaled logic CMOS and non-digital functionalities. It is featured by low-temperature microwave annealing (MWA). We demonstrate that MWA effectively repairs ion-implantation damage without the excessive dopant diffusion in CMOS. This technology is promising for implementing high-performance logic CMOS and highly-functional non-digital components on one chip.