Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

The effects of plasma enhanced atomic layer deposition (PEALD)-AlN interfacial passivation layer (IPL) on the Al
₂
O
₃
/In
_0.53
Ga
_0.47
As interfaces qualities are studied with different plasma powers. The improvement in electrical properties, including capacitance-voltage (C-V) hysteresis, frequency dispersion, and interface state densities (Dit) are demonstrated on the Al
₂
O
₃
/n, p-In
_0.53
Ga
_0.47
As MOS capacitors. The excellent C-V behaviors are observed on both type of In
_0.53
Ga
_0.47
As-based MOS devices by performing a thin AlN-IPL at the plasma power of 150 W. To explore the interaction between PEALD-AlN layer and In
_0.53
Ga
_0.47
As surface, X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy analyses have also been characterized.