Universal NBTI Compact Model for Circuit Aging Simulation under Any Stress Conditions

In this paper, a compact model for the negative bias temperature instability (NBTI) is developed by considering the interface-state generation and the hole-trapping mechanisms. This model shows accurate reproduction of the threshold voltage (V
_th
) degradations measured from samples fabricated with different dielectric materials as well as processes. A total of eight model parameters are introduced for describing the different degradation origins. The parameter values are verified to exhibit universal properties as a function of the electrical field within the gate oxide (E
_ox
). By implementing the universal NBTI model into the compact model HiSIM, the dynamic NBTI effect and circuit performance degradation can be predicted.