Deep-level characterization of p-n junction devices using trigonometric weight functions

This paper describes a method to treat capacitance transients in semiconductor junctions using trigonometric weight functions. The method is a variation of the classical deep-level transient spectroscopy (DLTS) technique using a double lock-in. The technique is suitable for measurements where the integrator module or lock-in amplifier works with a combination of sinusoidal functions multiplying the input signal before integration. The sensitivity and resolution of the method are determined and compared with the main variations of the DLTS technique. Experimental data for DX centers in p/sup +//n AlGaAs junctions are discussed. For a sample having single defects, as DX centers, the proposed method enables the defect characterization using only one spectrum.