Low Voltage Organic/Inorganic Hybrid Complementary Inverter With Low Temperature All Solution Processed Semiconductor and Dielectric Layers

A novel organic/inorganic hybrid integration architecture was developed to realize low-voltage complementary inverters with low temperature (not exceeding 150°C) solution processed semiconductor and dielectric layers. The p-type organic transistor and n-type zinc-oxide transistor used different approaches to reduce the operation voltage, and can thus be easier to be integrated with compatible solution based processes.