Demonstration of In0.9Ga0.1As/GaAs0.18Sb0.82 near broken-gap tunnel FET with ION=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

We demonstrate high frequency switching characteristics of TFETs based on the In
0.9
Ga
0.1
As/GaAs
0.18
Sb
0.82
material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (I
ON
) of 740μA/μm, intrinsic RF transconductance (G
M
) of 700μS/μm, and a cut-off frequency (F
T
) of 19GHz at V
DS
=0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.