High electron mobility triangular InGaAs-OI nMOSFETs with (111)B side surfaces formed by MOVPE growth on narrow fin structures

Triangular In
0.53
Ga
0.47
As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. Triangular shaped channels with bottom width down to 30 nm were formed by MOVPE growth on narrow InGaAs-OI fins. The formed (111)B surface was demonstrated to provide higher mobility compared with reference InGaAs-OI tri-gate (1.9×) as well as bulk (100) InGaAs nMOSFETs (1.6×), which is possibly due to reduced D
it
in conduction band and resultant suppressed carrier trapping at the MOS interface. Lower noise and hysteresis in triangular device supported this model. High I
on
value of 930 μA/μm at L
g
= 300 nm indicates the potential of the triangular InGaAs-OI nMOSFETs for ultra-low power and high performance CMOS applications.