A new way to break through the limitation of CS-layer doping on the breakdown voltage of CSTBT: The superjunction solution

A novel high performance carrier stored trench transistor (CSTBT) with a superjunction structure (SJ-CSTBT) proposed. It breaks through the limitation of carrier stored (CS) layer on the IGBT breakdown voltage Without CS-layer doping concentration limitation, the proposed SJ-CSTBT has better performances on both Vce(sat) and breakdown voltage (BV) than the conventional CSTBT(C-CSTBT). While the p-pillars collect the plasma deep from the anode side, thus its turn-off speed is significantly enhanced and turn-off loss (E
_off
) is reduced. The static and dynamic performances are simulated by 2D numerical simulation. The simulation results show that the SJ-CSTBT exhibits a breakdown voltage that is raised by 400 V, and the on-state voltage is reduced by 0.4 V. At the same time, the turn-off loss is decreased by about 50%. Even when the CS-layer doping is above 4e16 cm
^-3
, the BV of the proposed device structure is higher than 1500V while the C-CSTBT is lower than 200V.