Nonlinear transistor modeling for industrial 0.25-µm AlGaN-GaN HEMTs

Industrial microwave technologies presents specific modeling issues. Foundries have to provide design kits containing linear and nonlinear models which are multi-purpose, scalable and as accurate as possible. This can become quite challenging for technologies presenting complex nonlinear phenomena, such as GaN-based devices. Good trade-off among accuracy, numerical efficiency and generality can be anyway achieved, as shown in the paper.