Compact modeling of nano-scale trapezoidal cross-sectional FinFETs

Analytical compact model for the drain current and trans-capacitances of undoped or lightly doped nanoscale FinFETs with trapezoidal cross section is presented. The compact model of rectangular FinFETs is applied in trapezoidal FinFETs using the concept of the equivalent device parameters. The model is compared with the results of three-dimensional numerical device simulations. The overall results reveal the very good accuracy of the proposed compact model, making it suitable for circuit design simulation tools.