Abstract:
The authors report a flexible transistors based on 2D atomic sheets such as graphene and MoS2 that features record electrical-mechanical properties and offer the highest ...Show MoreMetadata
Abstract:
The authors report a flexible transistors based on 2D atomic sheets such as graphene and MoS2 that features record electrical-mechanical properties and offer the highest prospects for realizing Si-CMOS like performance on arbitrary plastic substrates. Graphene is ideal for analog RF devices while MoS2 is ideal for digital low-power FETs.
Published in: 71st Device Research Conference
Date of Conference: 23-26 June 2013
Date Added to IEEE Xplore: 17 October 2013
ISBN Information:
Print ISSN: 1548-3770