Experimental evaluation of a 600 V super-junction planar PT IGBT prototype — Comparison with planar PT and trench gate PT technologies

We report, for the first time, an experimental electrical characterization of a super-junction PT IGBT feasibility study on applying the charge compensation device concept to a planar punch-through IGBT. We also performed a comparison both with a planar PT IGBT and a trench gate PT IGBT.