Termocompensation of tensoresistive sensors using bipolar junction transistor in extended temperature range

This article represents the results of mathematical modeling of thermocompensation scheme using bipolar junction transistor. Also it represents the result of temperature testing by experimental model in extended temperature range 25–2500C. It was shown that practical realization of this thermocompensation scheme is real for temperature up to 2500C and this method is capable of minimization temperature dependence of bridge output by ∼ 0,05-K),015%/0C.