Zn diffusion in Ruthenium doped InP with annealing by Metalorganic Vapor Phase Epitaxy

Ruthenium (Ru) as the semi-insulated doping material for InP has good characteristics in terms of the capacitance and heat dissipation of the current blocking layer for Laser Diodes. However unintentional Zn diffusion from adjacent p-InP into Ru-InP causes the degradation of Laser characteristics such as the output power. In this paper, we fabricated p-InP/Ru-InP/pInP (p/Ru/p-InP) structure by Metalorganic Vapor Phase Epitaxy (MOVPE) and analyzed the behavior of Zn diffusion from Zn-InP into Ru-InP after annealing by SIMS measurement.