Quantum Confinement and Volume Inversion in ${\rm MOS}^{3}$ Model for Short-Channel Tri-Gate MOSFETs

An efficient way to include the effects of quantum confinement and volume inversion in the
${\rm MOS}^{3}$
compact model for lightly doped triple-gate silicon-on-insulator MOSFETs is presented. The model is verified with numerical results based on the nonequilibrium Green's function formalism. The numerically efficient modeling approach shows a good agreement down to a channel length of 10 nm and silicon fin thickness of 3 nm.