Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating

Toward the light source for on-chip interconnection, a current-injection-type membrane distributed feedback laser with a surface gating structure is demonstrated. In this device, 450-nm-thick GaInAsP/InP layers with lateral-current-injection structure prepared by a two step OMVPE regrowth-method is bonded on a host substrate by using Benzocyclobutene bonding process. A threshold current of
I
_th
=11 mA is obtained with a cavity length of 300 μm and a stripe of 1 μm.