A 54 GHz f/sub max/ implanted base 0.35 /spl mu/m single-polysilicon bipolar technology

We report the fabrication of high performance single-polysilicon npn bipolar transistors using a low cost 200 mm 0.35 /spl mu/m bipolar technology. The devices feature record cut-off frequency and maximum oscillation frequency of 35 GHz and 54 GHz respectively, comparable to state-of-the-art results from more complex double-polysilicon bipolar processes.